Skip to main content

Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

A. Agrawal, S. Chouksey, W. Rachmady, S. Vishwanath, S. Ghose, M. Mehta, J. Torres, A.A. Oni, X. Weng, H. Li, D. Merrill, M. Metz, A. Murthy, J. Kavalieros

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
    Length: 00:19:51