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Reliability of Ultrathin High-K Dielectrics on Chemical-Vapor Deposited 2D Semiconductors
15 Dec 2020

Reliability of Ultrathin High-K Dielectrics on Chemical-Vapor Deposited 2D Semiconductors

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Sources of Variability in MoS2 Transistors
15 Dec 2020

Sources of Variability in MoS2 Transistors

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Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection
15 Dec 2020

Multiscale Simulation of Ferroelectric Tunnel Junction Memory Enabled by van der Waals Heterojunction: Comparison to Experiment and Performance Projection

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Dual Gate Synthetic WS2 MOSFETs With 120 uS/um Gm, 2.7 uF/cm2 capacitance and ambipolar channel
15 Dec 2020

Dual Gate Synthetic WS2 MOSFETs With 120 uS/um Gm, 2.7 uF/cm2 capacitance and ambipolar channel

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Sub-1nm EOT ES2-FET with I DS > 600 uA/um at V DS = 1V and SS < 70 mV/dec at L G = 40nm
15 Dec 2020

Sub-1nm EOT ES2-FET with I DS > 600 uA/um at V DS = 1V and SS < 70 mV/dec at L G = 40nm

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Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length
15 Dec 2020

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

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Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application
15 Dec 2020

Gate-All-Around Strained Si 0.4 Ge 0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

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Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs
15 Dec 2020

Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs

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Ferroelecteic Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
15 Dec 2020

Ferroelecteic Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants

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Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model Based Analysis
15 Dec 2020

Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model Based Analysis

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Examination of the Interplay Between Polarization Switching and Charge Trapping in Ferroelectric FET
15 Dec 2020

Examination of the Interplay Between Polarization Switching and Charge Trapping in Ferroelectric FET

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Development of High Voltage Vertical GaN PN Diodes
15 Dec 2020

Development of High Voltage Vertical GaN PN Diodes

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