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Dual Gate Synthetic WS2 MOSFETs With 120 uS/um Gm, 2.7 uF/cm2 capacitance and ambipolar channel

Dennis Lin, Xiangyu Wu, Daire Cott, Devin Verreck, Benjamin Groven, Stephanie Sergeant, Quentin Smeets, Surajit Sutar, Inge Asselberghs and Iuliana Radu

DOI
10.17023/yh1e-fj47
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    Length: 00:19:51

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