3.3 kV Back-Gate-controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

DOI

10.17023/0wk8-j797

EDS

Members: $5.00
IEEE Members: $10.00
Non-members: $20.00

Length: 00:19:49

15 Dec 2020

Tags:

double side process

More Like This

Microelectromechanical Systems Webinar Series: Wafer-Scale Heterogeneous Integration XOI for Power, Photonic and Acoustic Devices (Video)

06 Feb 2025

Microelectromechanical Systems Webinar Series: Wafer-Scale Heterogeneous Integration XOI for Power, Photonic and Acoustic Devices (Video)

1.00 pdh

EDS

Members: Free
IEEE Members: $15.00
Non-members: $20.00

Semiconductor Manufacturing Webinar Series Topic: Navigating the Future: From Climate Change and Societal Megatrends to development of Sustainable Technologies for Responsible Products (Video)

05 Feb 2025

Semiconductor Manufacturing Webinar Series Topic: Navigating the Future: From Climate Change and Societal Megatrends to development of Sustainable Technologies for Responsible Products (Video)

1.00 pdh

EDS

Members: Free
IEEE Members: $15.00
Non-members: $20.00

Manufacturing Webinar Series - Exploring Sustainable Alternatives in Semiconductor Manufacturing

13 Nov 2024

Manufacturing Webinar Series - Exploring Sustainable Alternatives in Semiconductor Manufacturing

1.00 pdh

EDS

Members: Free
IEEE Members: $15.00
Non-members: $20.00