Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity Haiwen Xu DOI 10.17023/h3ey-pm78 EDS Members: $5.00 IEEE Members: $10.00 Non-members: $20.00 Length: 01:38:04 16 Jun 2020 Tags: technology sessions IEEE active doping haiwen xu cvd epitaxy contact resistivity surface eds ga boosted concentration boron doped vlsi video
16 Jun 2020 Tags: technology sessions IEEE active doping haiwen xu cvd epitaxy contact resistivity surface eds ga boosted concentration boron doped vlsi video