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Atomic Hydrogen Exposure to Enable High Quality Low Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
15 Dec 2020

Atomic Hydrogen Exposure to Enable High Quality Low Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

  • EDS
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    Non-members: $20.00
Technology Sessions:First 3D Monolithic Complementary FET (CFET) Integration on 300 mm Wafers
16 Jun 2020

Technology Sessions:First 3D Monolithic Complementary FET (CFET) Integration on 300 mm Wafers

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
GaN Power Devices Session 3D
06 Apr 2020

GaN Power Devices Session 3D

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00