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Ferroelecteic Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
15 Dec 2020

Ferroelecteic Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants

  • EDS
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Capacitor less, Long Retention (>400s) DRAM Cell Paving the Way Towards Low Power and High Density Monolithic 3D DRAM
15 Dec 2020

Capacitor less, Long Retention (>400s) DRAM Cell Paving the Way Towards Low Power and High Density Monolithic 3D DRAM

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00