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Double Gate W Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM
15 Dec 2020

Double Gate W Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Monolithic 3D Integration of High Endurance Multi-Bit Ferroelectric FET for Accelerating COmpute In Memory
15 Dec 2020

Monolithic 3D Integration of High Endurance Multi-Bit Ferroelectric FET for Accelerating COmpute In Memory

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
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