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A Vertical Split Gate Flash Memory Featuring High Speed Source Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing in Memory (CIM)
15 Dec 2020

A Vertical Split Gate Flash Memory Featuring High Speed Source Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing in Memory (CIM)

  • EDS
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    Non-members: $20.00
Technology Sessions:Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window (>10V) and Excellent 100K Endurance
16 Jun 2020

Technology Sessions:Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window (>10V) and Excellent 100K Endurance

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
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