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10 nm Channel Length Indium Tin Oxide Transistors with I on =1860 uA/um, Gm = 1050 uS/um at V ds = 1V with BEOL Compatibility
15 Dec 2020

10 nm Channel Length Indium Tin Oxide Transistors with I on =1860 uA/um, Gm = 1050 uS/um at V ds = 1V with BEOL Compatibility

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