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Characterization Scheme for Plasma Induced Defect Creation Due to Stochastic Lateral Straggling in Si Substrates for Ultra Low Leakage Devices
15 Dec 2020

Characterization Scheme for Plasma Induced Defect Creation Due to Stochastic Lateral Straggling in Si Substrates for Ultra Low Leakage Devices

  • EDS
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    IEEE Members: $10.00
    Non-members: $20.00
A Novel PUF Using Stochastic Short Term Memory Time of Oxide Based RRAM for Embedded Applications
15 Dec 2020

A Novel PUF Using Stochastic Short Term Memory Time of Oxide Based RRAM for Embedded Applications

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00