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Beyond the Boltzman and Nernst limits Next Generation Transistors for Computing and Sensing and Breaking the Mold: Using SiGe Technology in Ways That Were Never Envisioned
03 Aug 2023

Beyond the Boltzman and Nernst limits Next Generation Transistors for Computing and Sensing and Breaking the Mold: Using SiGe Technology in Ways That Were Never Envisioned

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  • EDS
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Monolayer MoS2 Steep Slope Transistors with Record High Sub 60 mV/decade Current Denisty Using Dirac Source Electron Injection
15 Dec 2020

Monolayer MoS2 Steep Slope Transistors with Record High Sub 60 mV/decade Current Denisty Using Dirac Source Electron Injection

  • EDS
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    IEEE Members: $10.00
    Non-members: $20.00
Double Gate W Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM
15 Dec 2020

Double Gate W Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM

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Flexible metal oxide thin-film transistors for analog electronics
07 Oct 2020

Flexible metal oxide thin-film transistors for analog electronics

1.00 pdh
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RSDFT-NEGF Quantum Transport Simulation of Ultra-Small Field-Effect Transistors
01 Mar 2020

RSDFT-NEGF Quantum Transport Simulation of Ultra-Small Field-Effect Transistors

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High Gain Optical Sensors Enabled by Subthreshold Operation of Photodiode-Gated Transistors
01 Mar 2020

High Gain Optical Sensors Enabled by Subthreshold Operation of Photodiode-Gated Transistors

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