5 kV Multi-Channel AIGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode

Ming Xiao, Yunwei Ma, Ruizhe Zhang, Yuhao Zhang

DOI

10.17023/pjga-n820

EDS

Members: $5.00
IEEE Members: $10.00
Non-members: $20.00

Length: 00:19:57

15 Dec 2020

Tags:

5 kv multi channel

junction fin anode

More Like This

Manufacturing Webinar Series - Exploring Sustainable Alternatives in Semiconductor Manufacturing

13 Nov 2024

Manufacturing Webinar Series - Exploring Sustainable Alternatives in Semiconductor Manufacturing

1.00 pdh

EDS

Members: Free
IEEE Members: $15.00
Non-members: $20.00

Game Changing Semiconductor Technologies - From High Power to Miniaturized and Smart LEDs (Video)

22 Oct 2024

Game Changing Semiconductor Technologies - From High Power to Miniaturized and Smart LEDs (Video)

1.00 pdh

EDS

Members: Free
IEEE Members: $15.00
Non-members: $20.00

Carbon footprint reduction in Semiconductor fabs (Video)

16 Oct 2024

Carbon footprint reduction in Semiconductor fabs (Video)

1.00 pdh

EDS

Members: Free
IEEE Members: $15.00
Non-members: $20.00