Technology Sessions: BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with IoN = 370 uA/um, SS=73mV/dec and IoN/IOFF ratio>4x10^9

Wriddhi Chakarborty

DOI

10.17023/fzks-n507

EDS

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Length: 01:09:35

16 Jun 2020

Tags:

technology sessions

compatible dual gate

wriddhi chakarborty

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