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Double Gate W Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM
15 Dec 2020

Double Gate W Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM

  • EDS
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    Non-members: $20.00
Technology Sessions: BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with IoN = 370 uA/um, SS=73mV/dec and IoN/IOFF ratio>4x10^9
16 Jun 2020

Technology Sessions: BEOL Compatible Dual-Gate Ultra Thin-Body W-Doped Indium-Oxide Transistor with IoN = 370 uA/um, SS=73mV/dec and IoN/IOFF ratio>4x10^9

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
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