Skip to main content

byung jin cho

Capacitance Boosting bt Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device
15 Dec 2020

Capacitance Boosting bt Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Low Temperature and Ion Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo Sensor Circuits
15 Dec 2020

Low Temperature and Ion Cut Based Monolithic 3D Process Integration Platform Incorporated with CMOS, RRAM and Photo Sensor Circuits

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Subscribe to byung jin cho