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Industry''s First Recessed Gate Transistor Technology for Sense Amplifier Circuit in DRAM: Phenomena of Randomly Threshold Voltage High Flying and Subthreshold Swing Degradation
15 Dec 2020

Industry''s First Recessed Gate Transistor Technology for Sense Amplifier Circuit in DRAM: Phenomena of Randomly Threshold Voltage High Flying and Subthreshold Swing Degradation

  • EDS
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    Non-members: $20.00
A Stacked Embedded DRAM Array for LPDDR4/4V using Hybrid Bonding 3D Integration with 34GB/s/1Gb 0.88pJ/b Logic to Memory Interface
15 Dec 2020

A Stacked Embedded DRAM Array for LPDDR4/4V using Hybrid Bonding 3D Integration with 34GB/s/1Gb 0.88pJ/b Logic to Memory Interface

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
Anti Ferroelectric HfxZr1-xO2 Capactiors for High Density 3D Embedded DRAM
15 Dec 2020

Anti Ferroelectric HfxZr1-xO2 Capactiors for High Density 3D Embedded DRAM

  • EDS
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    Non-members: $20.00
Capacitor less, Long Retention (>400s) DRAM Cell Paving the Way Towards Low Power and High Density Monolithic 3D DRAM
15 Dec 2020

Capacitor less, Long Retention (>400s) DRAM Cell Paving the Way Towards Low Power and High Density Monolithic 3D DRAM

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00