First Demonstration of Heterogeneous Complemntary FETs Utilizing Low Temperature (200 C) Hetero Layers Bonding Technique (LT-HBT)

T.-Z. Hong, W.-H. Chang, A. Agarwal, Y.-T. Huang, C.-Y. Yang, T.-Y. Chu, H.-Y. Chao, Y. Chuang, S.-T. Chung, J.-H. Lin, S.-M. Luo, C.-J.Tsai, M.-J. Li, X.-. Yu, N.-C. Lin, T.-C. Cho, P.-J. Sung, C.J. Su, G.-L. Luo, F.-K. Hsueh, K.-L. Lin, H. Ishii, T. Irisawa, T. Maeda, C.-T. Wu, W. C.-Yu. Ma, D.-D. Lu, K.-H. Kao, Y.-J. Lee, H.J.-H. Chen, C.-L. Lin, R. W. chuang, K.-P. Huang, S. Samukawa, Y.-M. Li, J.-H. Tarng, T.-S. Chao, M. Miura, G.-W. Huang, W.-F. Wu, J.-Y. Li, J.-M. Shieh, Y.-H. Wang, W.-K. Yeh