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3D Integration of Vertical Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers
15 Dec 2020

3D Integration of Vertical Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers

  • EDS
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    Non-members: $20.00
Monolayer MoS2 Steep Slope Transistors with Record High Sub 60 mV/decade Current Denisty Using Dirac Source Electron Injection
15 Dec 2020

Monolayer MoS2 Steep Slope Transistors with Record High Sub 60 mV/decade Current Denisty Using Dirac Source Electron Injection

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00
The Demonstration of Carbon Nano Tubes (CNTs) as a Promising High Aspect Ratio (>25) Through Silicon Vias (TSVs) Material for the Vertical Connection in the High Dense 3DICs
15 Dec 2020

The Demonstration of Carbon Nano Tubes (CNTs) as a Promising High Aspect Ratio (>25) Through Silicon Vias (TSVs) Material for the Vertical Connection in the High Dense 3DICs

  • EDS
    Members: $5.00
    IEEE Members: $10.00
    Non-members: $20.00